TJ11A10M3 mosfet equivalent, n-channel mosfet.
*Low drain-source on-resistance:
RDS(on) ≤130mΩ.(VGS = -10 V)
*Enhancement mode:
Vth = -2.0 to -4.0V (VDS = -10 V, ID=-1mA)
*100% avalanche tested
*Minimu.
of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for .
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