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TK11Q65W - N-Channel MOSFET

Features

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  • Low drain-source on-resistance: RDS(on) ≤0.44Ω.
  • Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.45mA).
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK11Q65W

Datasheet Details

Part number TK11Q65W
Manufacturer INCHANGE
File Size 228.87 KB
Description N-Channel MOSFET
Datasheet download datasheet TK11Q65W Datasheet
Additional preview pages of the TK11Q65W datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK11Q65W，ITK11Q65W ·FEATURES ·Low drain-source on-resistance: RDS(on) ≤0.44Ω. ·Enhancement mode: Vth =2.5 to 3.5V (VDS = 10 V, ID=0.45mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 650 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 11.1 IDM Drain Current-Single Pulsed 44.4 PD Total Dissipation @TC=25℃ 100 Tj Max.
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