Datasheet Details
| Part number | TK20J50D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.71 KB |
| Description | N-Channel MOSFET |
| Datasheet | TK20J50D-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor ·.
| Part number | TK20J50D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.71 KB |
| Description | N-Channel MOSFET |
| Datasheet | TK20J50D-INCHANGE.pdf |
|
|
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·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching voltage regulators ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 20 A ID(puls) Pulse Drain Current 80 A Ptot Total Dissipation@TC=25℃ 280 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.45 ℃/W TK20J50D isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=10mA VGS(th) Gate Threshold Voltage VDS= 10V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
TK20J50D | N-Channel MOSFET | Toshiba |
| Part Number | Description |
|---|---|
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