TK20N60W - N-Channel MOSFET

INCHANGE

Datasheet Details

Low drain-source on-resistance: RDS(ON) ≤ 155mΩ.
Easy to control Gate switching.
Enhancement mode: Vth = 2.7 to 3.7V (VDS = 10 V, ID=1mA).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Dec 9, 2020 |