TK20N60W - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TK20N60W
Manufacturer	Toshiba
File Size	245.94 KB
Description	Silicon N-Channel MOSFET
Datasheet	TK20N60W Datasheet
Additional preview pages of the TK20N60W datasheet.

(1) Low drain-source on-resistance: RDS(ON) = 0.13 Ω (typ. ) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK20N60W 1: Gate 2: Drain (Heatsink) 3: Source TO-247 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power di.

📁 Similar Datasheet

TK20N60W - N-Channel MOSFET (INCHANGE)
TK20N60W5 - N-Channel MOSFET (INCHANGE)
TK2019 - STEREO 20W (4OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
TK2050 - STEREO 50W (8OHM) CLASS-T DIGITAL AUDIO AMPLIFIER (Tripath)
TK2051 - STEREO 50W (8ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)
TK2070 - STEREO 70W (4Ohm) CLASS-T DIGITAL AUDIO AMPLIFIER DRIVER (Tripath Technology)
TK20A - Current Transducer (Topstek)
TK20A20D - N-Channel MOSFET (INCHANGE)

Other Datasheets by Toshiba

Published: Nov 11, 2013 |