Datasheet4U Logo Datasheet4U.com

TK290P60Y - N-Channel MOSFET

Key Features

  • With To-252(DPAK) package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
TK290P60Y Silicon N-Channel MOSFET Toshiba
TK290P65Y Silicon N-Channel MOSFET Toshiba
TK290A60Y Silicon N-Channel MOSFET Toshiba
TK290A65Y Silicon N-Channel MOSFET Toshiba
TK200F04N1L Silicon N-Channel MOSFET Toshiba

Other Datasheets by Inchange Semiconductor

Part Number Description
TK290P65Y N-Channel MOSFET
TK290A60Y N-Channel MOSFET
TK290A65Y N-Channel MOSFET
TK20A20D N-Channel MOSFET
TK20A25D N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK290P60Y ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-Single Pulsed ±30 11.5 7.3 46 PD Total Dissipation @TC=25℃ 100 Tch Max.