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TK290P60Y - N-Channel MOSFET

Features

  • With To-252(DPAK) package.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Datasheet preview – TK290P60Y

Datasheet Details

Part number TK290P60Y
Manufacturer INCHANGE
File Size 204.46 KB
Description N-Channel MOSFET
Datasheet download datasheet TK290P60Y Datasheet
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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK290P60Y ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous@TC=25℃ TC=125℃ Drain Current-Single Pulsed ±30 11.5 7.3 46 PD Total Dissipation @TC=25℃ 100 Tch Max.
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