900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






INCHANGE

TK31N60W Datasheet Preview

TK31N60W Datasheet

N-Channel MOSFET

No Preview Available !

Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK31N60W
·FEATURES
·With TO-247 packaging
·Easy to use
·High speed switching
·Very high commutation ruggedness
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·PFC stages
·LCD & PDP TV
·Power supply
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGSS
Gate-Source Voltage
±30
ID
Drain Current-Continuous
30.8
IDM
Drain Current-Single Pulsed
123
PD
Total Dissipation
230
Tch
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT
V
V
A
A
W
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX
0.54
50
UNIT
/W
/W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark




INCHANGE

TK31N60W Datasheet Preview

TK31N60W Datasheet

N-Channel MOSFET

No Preview Available !

Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
TK31N60W
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 10mA
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=1.5mA
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=15.4A
IGSS
Gate-Source Leakage Current
VGS= ±30V;VDS= 0V
IDSS
Drain-Source Leakage Current VDS= 600V; VGS= 0V
VSD
Diode forward voltage
ISD=30.8A, VGS = 0 V
600
V
2.7
3.7
V
88
mΩ
±1
μA
10
μA
1.7
V
NOTICE
ISC reserves the rights to make changes of the content herein the datasheet at any time without
notification. The information contained herein is presented only as a guide for the applications of
our products.
ISC products are intended for usage in general electronic equipment. The products are not designed
for use in equipment which require specialized quality and/or reliability, or in equipment which
could have applications in hazardous environments, aerospace industry, or medical field. Please
contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular
purpose, nor does ISC assume any liability arising from the application or use of any products, and
specifically disclaims any and all liability, including without limitation special, consequential or
incidental damages.
isc websitewww.iscsemi.cn
2 isc & iscsemi is registered trademark



Part Number TK31N60W
Description N-Channel MOSFET
Maker INCHANGE
Total Page 2 Pages
PDF Download

TK31N60W Datasheet PDF





Similar Datasheet

1 TK31N60W Silicon N-Channel MOSFET
Toshiba
2 TK31N60W N-Channel MOSFET
INCHANGE
3 TK31N60W5 MOSFETs
Toshiba Semiconductor
4 TK31N60X Silicon N-Channel MOSFET
Toshiba





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy