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TK31N60W - N-Channel MOSFET

Features

  • With TO-247 packaging.
  • Easy to use.
  • High speed switching.
  • Very high commutation ruggedness.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Full PDF Text Transcription

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Isc N-Channel MOSFET Transistor INCHANGE Semiconductor TK31N60W ·FEATURES ·With TO-247 packaging ·Easy to use ·High speed switching ·Very high commutation ruggedness ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 30.8 IDM Drain Current-Single Pulsed 123 PD Total Dissipation 230 Tch Max.
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