TK31N60W
TK31N60W is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.073 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 1.5 m A)
3. Packaging and Internal Circuit
1: Gate 2: Drain (Heatsink) 3: Source
TO-247
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Mounting torque (Note 1) (Note 1) (Tc = 25) (Note 2) (Note 1) (Note 1) Symbol VDSS VGSS ID IDP PD EAS IAR IDR IDRP Tch Tstg TOR Rating 600 ±30 30.8 123 230 437 7.7 30.8 123 150 -55 to 150 0.8 Nm W m J A A Unit V
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Start of mercial production
2012-09 2013-12-26 Rev.3.0
5. Thermal Characteristics
Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Symbol Rth(ch-c) Rth(ch-a) Max 0.543 50 Unit /W
Note 1: Ensure that the channel temperature does not exceed 150. Note 2: VDD = 90 V, Tch = 25 (initial), L = 12.9 m H, RG = 25 Ω, IAR = 7.7 A
Note:
This transistor is sensitive to electrostatic discharge and should be handled with care.
2013-12-26 Rev.3.0
6. Electrical Characteristics 6.1....
