Datasheet Details
| Part number | TK9J90E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.91 KB |
| Description | N-Channel MOSFET |
| Datasheet | TK9J90E-INCHANGE.pdf |
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Overview: isc N-Channel MOSFET Transistor ·.
| Part number | TK9J90E |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.91 KB |
| Description | N-Channel MOSFET |
| Datasheet | TK9J90E-INCHANGE.pdf |
|
|
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·Drain Current ID= 9A@ TC=25℃ ·Drain Source Voltage- : VDSS= 900V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching voltage regulators ·ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 900 V VGS Gate-Source Voltage ±30 V ID Drain Current-continuous@ TC=25℃ 9 A ID(puls) Pulse Drain Current 27 A Ptot Total Dissipation@TC=25℃ 250 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.5 ℃/W TK9J90E isc website：.iscsemi.cn 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0;
ID=10mA VGS(th) Gate Threshold Voltage VDS= VGS;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
TK9J90E | N-Channel MOSFET | Toshiba |
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