TT2170LS Overview
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 2.7A; IB= 0.54A VBE(sat) Base-Emitter Saturation Voltage IC= 2.7A; IB= 0.54A IEBO Emitter Cutoff Current ICES Collector Cutoff Current hFE-1 DC Current Gain VEB= 4V;.
