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TTA1452 Datasheet Preview

TTA1452 Datasheet

PNP Transistor

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isc Silicon PNP Power Transistor
TTA1452
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max)@IC= -6A
·Good Linearity of hFE
·High Switching Speed
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for high current switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-80
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-6
V
IC
Collector Current-Continuous
-12
A
IB
Base Current-Continuous
PC
Collector Power Dissipation
@ TC=25
TJ
Junction Temperature
-2
A
30
W
150
Tstg
Storage Temperature Range
-55~150
isc websitewww.iscsemi.com
1 isc & iscsemi is registered trademark




INCHANGE

TTA1452 Datasheet Preview

TTA1452 Datasheet

PNP Transistor

No Preview Available !

isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= -6A; IB= -0.3A
ICBO
Collector Cutoff Current
VCB= -80V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= -6V ; IC= 0
hFE-1
DC Current Gain
IC= -1A ; VCE= -1V
hFE-2
DC Current Gain
IC= -6A ; VCE= -1V
COB
Output Capacitance
IE= 0; VCB= -10V;ftest= 1MHz
fT
Current-Gain—Bandwidth Product
IC= -1A; VCE= -5V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
IC= -6A ,IB1= -IB2= -0.3A,
VCC= -30V, RL= 5Ω
hFE-1 Classifications
O
Y
70-140 120-240
TTA1452
MIN TYP. MAX UNIT
-80
V
-0.4 V
-1.2 V
-10 μA
-10 μA
70
240
40
400
pF
50
MHz
0.3
μs
1.0
μs
0.5
μs
isc websitewww.iscsemi.com
2 isc & iscsemi is registered trademark



Part Number TTA1452
Description PNP Transistor
Maker INCHANGE
Total Page 3 Pages
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TTA1452 Datasheet PDF





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