Datasheet Details
| Part number | TTD1415 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.75 KB |
| Description | NPN Transistor |
| Datasheet | TTD1415-INCHANGE.pdf |
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Overview: isc Silicon NPN Darlington Power Transistor.
| Part number | TTD1415 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 186.75 KB |
| Description | NPN Transistor |
| Datasheet | TTD1415-INCHANGE.pdf |
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·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 3V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·High power switching applications ·Hammer driver,pulse motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 7 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.2 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ TTD1415 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor TTD1415 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.
MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 30mA ;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
TTD1415B | Silicon NPN Transistor | Toshiba |
| Part Number | Description |
|---|---|
| TTD1415B | Silicon NPN Power Transistor |
| TTD1410 | NPN Transistor |
| TTD1409B | NPN Transistor |