TTD1415B Description
hFE = 2000(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage- : IC= 0 hFE-1 DC Current Gain IC= 3A; VCE= 3V hFE-2 DC Current Gain IC= 6A;.
TTD1415B is Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
TTD1415B | Silicon NPN Transistor |
hFE = 2000(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage- : IC= 0 hFE-1 DC Current Gain IC= 3A; VCE= 3V hFE-2 DC Current Gain IC= 6A;.