TTD1415 Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain.
- Part: TTD1415
- Manufacturer: Inchange Semiconductor
- Size: 186.75 KB
Similar Part Number
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
TTD1415B | Silicon NPN Transistor |