TTD1415 Overview
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain.
| Part number | TTD1415 |
|---|---|
| Datasheet | TTD1415-INCHANGE.pdf |
| File Size | 186.75 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
|
|
|
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
![]() |
TTD1415B | Silicon NPN Transistor | Toshiba |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| TTD1415B | Silicon NPN Power Transistor |
| TTD1410 | NPN Transistor |
| TTD1409B | NPN Transistor |