TTD1415
TTD1415 is NPN Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 100V(Min)
- Collector-Emitter Saturation Voltage-
: VCE(sat)= 1.5V(Max) @IC= 3A
- High DC Current Gain
: h FE= 2000(Min) @ IC= 3A, VCE= 3V
- Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS
- High power switching applications
- Hammer driver,pulse motor driver applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
Collector Current-Continuous
Base Current-Continuous
Collector Power Dissipation @ TC=25℃
Junction Temperature
℃
Tstg
Storage Temperature Range
-55~150
℃...
