Datasheet4U Logo Datasheet4U.com

YZ21 - NPN Transistor

General Description

High DC Current Gain- : hFE = 2000(Min)@ IC= 2A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applicatio

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer

Other Datasheets by Inchange Semiconductor

Part Number Description
YZ21D NPN Power Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.