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YZ21D - NPN Power Transistor

Description

High DC Current Gain- : hFE = 500(Min)@ IC= 2A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min) APPLICATIONS

switching applications.

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YZ21 NPN Transistor

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 500(Min)@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min) APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VALUE UNI T 110 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNI T 1.56 ℃ /W YZ21D isc website：www.iscsemi.
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