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YZ21 - NPN Transistor

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Description

High DC Current Gain- : hFE = 2000(Min)@ IC= 2A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applicatio

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Datasheet Details

Part number YZ21
Manufacturer INCHANGE
File Size 202.90 KB
Description NPN Transistor
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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.
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