YZ21 - NPN Transistor

Inchange Semiconductor

General Description

High DC Current Gain- : hFE = 2000(Min)@ IC= 2A Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier and low speed switching applicatio

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Datasheet Details

Part number	YZ21
Manufacturer	Inchange Semiconductor
File Size	202.90 KB
Description	NPN Transistor
Datasheet	YZ21 Datasheet

Full PDF Text Transcription for YZ21 (Reference)

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isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·M...

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= 2A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications.

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