Download YZ21D Datasheet PDF
Inchange Semiconductor
YZ21D
DESCRIPTION - High DC Current Gain- : h FE = 500(Min)@ IC= 2A - Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 110V(Min) APPLICATIONS - Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VALUE UNI T VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @TC=25℃ Tj Junction Temperature ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case UNI T ℃...