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FTW20N50A
General Description˖
FTW20N50A, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power switching circuit for system
miniaturization and higher efficiency. The package form is
TO-3P(N), which accords with the RoHS standard..
Features˖
z Fast Switching z Low ON Resistance(RdsoQİ z Low Gate Charge (Typical Data:130nC) z Low Reverse transfer capacitances(Typical:65pF) z 100% Single Pulse avalanche energy Test
Applications˖
Power switch circuit of electron ballast and adaptor.
Absolute˄Tc= 25ć unless otherwise specified˅˖
VDSS ID PD (TC=25ć) RDS(ON)
TO–3P(N)
500 20 230 0.
FTW20N50A Datasheet
