FTW20N50A mosfet equivalent, n-channel mosfet.
z Fast Switching z Low ON Resistance(RdsoQİ z Low Gate Charge (Typical Data:130nC) z Low Reverse transfer capacitances(Typical:65pF) z 100% Single Pulse avalanche .
Power switch circuit of electron ballast and adaptor.
Absolute˄Tc= 25ć unless otherwise specified˅˖
VDSS ID PD (TC=25ć.
FTW20N50A, the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
which reduce the conduction loss, improve switching
performance and enhance the avalanche energy. The transistor
can be used in various power swit.
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