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International Rectifier Electronic Components Datasheet

GP20B60PD Datasheet

IRGP20B60PD

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SMPS IGBT
WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
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Applications
Telecom and Server SMPS
PFC and ZVS SMPS Circuits
Uninterruptable Power Supplies
Consumer Electronics Power Supplies
Features
NPT Technology, Positive Temperature Coefficient
Lower VCE(SAT)
Lower Parasitic Capacitances
Minimal Tail Current
HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
Tighter Distribution of Parameters
Higher Reliability
C
G
E
n-channel
Benefits
Parallel Operation for Higher Current Applications
Lower Conduction Losses and Switching Losses
Higher Switching Frequency up to 150kHz
PD - 94626
IRGP20B60PD
VCES = 600V
VCE(on) typ. = 2.05V
@ VGE = 15V IC = 13.0A
Equivalent MOSFET
Parameters 
RCE(on) typ. = 158m
ID (FET equivalent) = 20A
E
C
G
TO-247AC
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref. Fig. C.T.4)
dClamped Inductive Load Current
Diode Continous Forward Current
Diode Continous Forward Current
eMaximum Repetitive Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Parameter
RθJC (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
RθJC (Diode)
Thermal Resistance Junction-to-Case-(each Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount)
Weight
Max.
600
40
22
80
80
31
12
42
±20
220
86
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.58
2.5
–––
40
–––
Units
V
A
V
W
°C
Units
°C/W
g (oz)
1 www.irf.com
02/06/03


International Rectifier Electronic Components Datasheet

GP20B60PD Datasheet

IRGP20B60PD

No Preview Available !

IRGP20B60PD
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
RG
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Internal Gate Resistance
VCE(on)
Collector-to-Emitter Saturation Voltage
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VGE(th)
VGE(th)/TJ
gfe
ICES
Gate Threshold Voltage
Threshold Voltage temp. coefficient
Forward Transconductance
Collector-to-Emitter Leakage Current
VFM Diode Forward Voltage Drop
IGES Gate-to-Emitter Leakage Current
600 — — V VGE = 0V, IC = 500µA
— 0.32 — V/°C VGE = 0V, IC = 1mA (25°C-125°C)
— 4.3 — 1MHz, Open Collector
— 2.05 2.35
IC = 13A, VGE = 15V
— 2.50 2.80 V IC = 20A, VGE = 15V
— 2.65 3.00
IC = 13A, VGE = 15V, TJ = 125°C
— 3.30 3.70
IC = 20A, VGE = 15V, TJ = 125°C
3.0 4.0 5.0 V IC = 250µA
— -11 — mV/°C VCE = VGE, IC = 1.0mA
— 19 — S VCE = 50V, IC = 40A, PW = 80µs
— 1.0 250 µA VGE = 0V, VCE = 600V
— 0.1 — mA VGE = 0V, VCE = 600V, TJ = 125°C
— 1.4 1.7 V IF = 12A, VGE = 0V
— 1.3 1.6
IF = 12A, VGE = 0V, TJ = 125°C
— — ±100 nA VGE = ±20V, VCE = 0V
Ref.Fig
4, 5,6,8,9
7,8,9
10
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig
Qg Total Gate Charge (turn-on)
— 68 102
IC = 13A
17
Qgc Gate-to-Collector Charge (turn-on)
— 24 36 nC VCC = 400V
CT1
Qge Gate-to-Emitter Charge (turn-on)
— 10 15
VGE = 15V
Eon Turn-On Switching Loss
— 95 140
IC = 13A, VCC = 390V
CT3
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 100 145 µJ VGE = +15V, RG = 10, L = 200µH
— 195 285
fTJ = 25°C
td(on)
Turn-On delay time
— 20 26
IC = 13A, VCC = 390V
CT3
tr
td(off)
Rise time
Turn-Off delay time
— 5.0 7.0 ns VGE = +15V, RG = 10, L = 200µH
— 115 135
TJ = 25°C
tf Fall time
— 6.0 8.0
Eon Turn-On Switching Loss
— 165 215
IC = 13A, VCC = 390V
CT3
Eoff
Etotal
Turn-Off Switching Loss
Total Switching Loss
— 150 195 µJ VGE = +15V, RG = 10, L = 200µH
— 315 410
fTJ = 125°C
11,13
WF1,WF2
td(on)
Turn-On delay time
— 19 25
IC = 13A, VCC = 390V
CT3
tr
td(off)
Rise time
Turn-Off delay time
— 6.0 8.0 ns VGE = +15V, RG = 10, L = 200µH
— 125 140
TJ = 125°C
12,14
WF1,WF2
tf Fall time
— 13 17
Cies Input Capacitance
— 1570 —
VGE = 0V
16
Coes Output Capacitance
— 130 —
VCC = 30V
Cres
Coes eff.
Coes eff. (ER)
Reverse Transfer Capacitance
gEffective Output Capacitance (Time Related)
gEffective Output Capacitance (Energy Related)
— 20 — pF f = 1Mhz
— 94 —
VGE = 0V, VCE = 0V to 480V
— 76 —
15
TJ = 150°C, IC = 80A
3
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 480V, Vp =600V
CT2
Rg = 22, VGE = +15V to 0V
trr Diode Reverse Recovery Time
— 42 60 ns TJ = 25°C IF = 12A, VR = 200V,
19
— 80 120
TJ = 125°C di/dt = 200A/µs
Qrr Diode Reverse Recovery Charge
— 80 180 nC TJ = 25°C IF = 12A, VR = 200V,
21
— 220 600
TJ = 125°C di/dt = 200A/µs
Irr Peak Reverse Recovery Current
— 3.5 6.0 A TJ = 25°C IF = 12A, VR = 200V,
19,20,21,22
— 5.6 10
TJ = 125°C di/dt = 200A/µs
CT5
Notes:
 RCE(on) typ. = equivalent on-resistance = VCE(on) typ. / IC, where VCE(on) typ. = 2.05V and IC = 13A. ID (FET Equivalent) is the equivalent MOSFET ID rating @ 25°C for
applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
‚ VCC = 80% (VCES), VGE = 15V, L = 28µH, RG = 22Ω.
ƒ Pulse width limited by max. junction temperature.
„ Energy losses include "tail" and diode reverse recovery. Data generated with use of Diode 8ETH06.
… Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
2 www.irf.com


Part Number GP20B60PD
Description IRGP20B60PD
Maker IRF
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GP20B60PD Datasheet PDF






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