IS25C04 Datasheet | ISSI

.. IS25C02 IS25C04 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM ISSI Preliminary Information January 2006 ® Features - Serial Peripheral Interface (SPI) patible - Supports SPI Modes 0 (0,0) and 3 (1,1) - Low-voltage Operation - Vcc = 1.8V to 5.5V - Low power CMOS - Active current less than 3.0 m A (2.5V) - Standby current less than 1 µA (2.5V) - Block Write Protection - Protect 1/4, 1/2, or Entire Array - 16 byte page write mode - Partial page writes allowed - 10 MHz Clock Rate (5V) - Self timed write cycles - 5 ms max. @ 2.5V - High-reliability - Endurance: 1 million cycles per byte - Data retention: 100 years - 8-pin PDIP, 8-pin SOIC, and 8-pin TSSOP packages are available - Lead-free available DESCRIPTION The IS25C02 and IS25C04 are electrically erasable PROM devices that use the Serial Peripheral Interface (SPI) for munications. The IS25C02 is 2Kbit (256x 8) and the IS25C04 is 4Kbit (512x 8). The IS25C02/04 EEPROMs are offered in a wide operating voltage range of 1.8V to 5.5V to be patible with most application voltages. ISSI designed the IS25C02/ 04 to be an efficient SPI EEPROM solution. The devices are packaged in 8-pin PDIP, 8-pin SOIC, and 8pin TSSOP. The functional Features of the IS25C02/04 allow them to be among the most advanced serial non-volatile memories available. Each device has a Chip-Select (CS) pin, and a 3-wire interface of Serial Data In (SI), Serial Data Out (SO), and Serial Clock (SCK). While the 3-wire interface of the IS25C02/04 provides for high-speed access, a HOLD pin allows the memories to ignore the interface in a suspended state; later the HOLD pin reactivates munication without re-initializing the serial sequence. A Status Register facilitates a flexible write protection mechanism, and a device-ready bit (RDY). Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice....