CY7C281A
Overview
- CMOS for optimum speed/power
- High speed - 25 ns (commercial) - 30 ns (military)
- Low power - 495 mW (commercial) * * * * *
- - 660 mW (military) EPROM technology 100% programmable Slim 300-mil or standard 600-mil DIP or 28-pin LCC 5V ±10% VCC, commercial and military TTL-compatible I/O Direct replacement for bipolar PROMs Capable of withstanding >2001V static discharge tical, but are packaged in 300-mil and 600-mil-wide packages respectively. The CY7C281A is also available in a 28-pin leadless chip carrier. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. The CY7C281A and CY7C282A are plug-in replacements for bipolar devices and offer the advantages of lower power, superior performance, and programming yield. The EPROM cell requires only 12.5V for the super voltage, and low current requirements allow for gang programming. The EPROM cells allow each memory location to be tested 100% because each location is written into, erased, and repeatedly exercised prior to encapsulation. Each PROM is also tested for AC performance to guarantee that after customer programming, the product will meet DC and AC specification limits. Reading is accomplished by placing an active LOW signal on CS1 and CS2, and active HIGH signals on CS3 and CS4. The contents of the memory location addressed by the address lines (A0-A9) will become available on the output lines (O0-O7). Functional Description The CY7C281A and CY7C282A are high-performance 1024-word by 8-bit CMOS PROMs. They are functionally iden- LogicBlockDiagram
