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CY7C286 - 64K x 8 PROM

Description

The CY7C286 is a high-performance 64K x 8 CMOS PROM.

The CY7C286 is configured in the JEDEC-standard 512K EPROM pinout and is available in a 28-pin, 600-mil package and a 32-pin PLCC package.

Features

  • CMOS for optimum speed/power.
  • Windowed for reprogrammability.
  • High speed.
  • tAA = 45 ns.
  • Low power.
  • 120 mA active.
  • 40 mA standby EPROM technology, 100%programmable 5V ±10% VCC, commercial and military TTL-compatible I/O Capable of withstanding >2001V static discharge in the active mode and 40 mA in the standby mode. Access time is 45 ns. The CY7C286 is available in a cerDIP package equipped with.

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Other Datasheets by Cypress (Infineon)

Part Number Description
CY7C281 (CY7C281 / CY7C282) 1K x 8 PROM
CY7C281A (CY7C281A / CY7C282A) 1K x 8 PROM
CY7C282 (CY7C281 / CY7C282) 1K x 8 PROM
CY7C282A (CY7C281A / CY7C282A) 1K x 8 PROM
CY7C285 64K x 8 PROM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY7C286 64K x 8 Reprogrammable PROM Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — tAA = 45 ns • Low power — 120 mA active • • • • — 40 mA standby EPROM technology, 100%programmable 5V ±10% VCC, commercial and military TTL-compatible I/O Capable of withstanding >2001V static discharge in the active mode and 40 mA in the standby mode. Access time is 45 ns. The CY7C286 is available in a cerDIP package equipped with an erasure window to provide reprogrammability. When exposed to UV light, the PROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. The CY7C286 offers the advantage of low power, superior performance, and programming yield.
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