CY7C286 Datasheet | Cypress

64K x 8 Reprogrammable PROM Features - CMOS for optimum speed/power - Windowed for reprogrammability - High speed - tAA = 45 ns - Low power - 120 mA active - - - - - 40 mA standby EPROM technology, 100%programmable 5V ±10% VCC, mercial and military TTL-patible I/O Capable of withstanding >2001V static discharge in the active mode and 40 mA in the standby mode. Access time is 45 ns. The CY7C286 is available in a cerDIP package equipped with an erasure window to provide reprogrammability. When exposed to UV light, the PROM is erased and can be reprogrammed. The memory cells utilize proven EPROM floating-gate technology and byte-wide intelligent programming algorithms. The...