IS34MW04G084 - 4Gb(x8/x16) 1.8V NAND FLASH MEMORY

ISSI

Datasheet Details

Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Array: (256M + 8M) x 16bit - - Data Register: (1K + 32) x 16bit - - Page Size: (1K + 32) Byte - - Block Erase: (64K + 2K) Byte.
Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 45ns.

📁 Related Datasheet

IS3403 - P-Channel Enhancement Mode MOSFET (FORESEE)
IS3405 - P-Channel Enhancement Mode MOSFET (FORESEE)
IS341W - Photocoupler (ISOCOM)
IS3020 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ISOCOM)
IS3021 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ISOCOM)
IS3022 - OPTICALLY COUPLED BILATERAL SWITCH NON-ZERO CROSSING TRIAC (ISOCOM)
IS3051 - Photocoupler (ISOCOM)
IS3052 - Photocoupler (ISOCOM)

📌 All Tags

ISSI IS34MW04G084-like datasheet

IS34MW04G084 Stock/Price