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IS34MW04G084 - 4Gb(x8/x16) 1.8V NAND FLASH MEMORY

Key Features

  • Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Array: (256M + 8M) x 16bit - - Data Register: (1K + 32) x 16bit - - Page Size: (1K + 32) Byte - - Block Erase: (64K + 2K) Byte.
  • Highest performance - Read Performance - Random Read: 25us (Max. ) - Serial Access: 45ns.

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Other Datasheets by ISSI (now Infineon)

Part Number Description
IS34MW04G088 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY
IS34MW04G164 4Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS34MW04G168 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY
IS34MW01G084 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS34MW01G164 1Gb (x8/x16) 1.8V NAND FLASH MEMORY

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS34MW04G084/164 IS35MW04G084/164 4Gb SLC-4b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW04G084/164 4Gb(x8/x16) 1.8V NAND FLASH MEMORY with 4b ECC FEATURES  Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8 /256Mb x16 - X8: - Memory Cell Array: (512M + 16M) x 8bit - Data Register: (2K + 64) x 8bit - Page Size: (2K + 64) Byte - Block Erase: (128K + 4K) Byte - X16: - - Memory Cell Array: (256M + 8M) x 16bit - - Data Register: (1K + 32) x 16bit - - Page Size: (1K + 32) Byte - - Block Erase: (64K + 2K) Byte  Highest performance - Read Performance - Random Read: 25us (Max.) - Serial Access: 45ns (Max.) - Write Performance - Program time: 300us - typical - Block Erase time: 3ms – typical  Low Power with Wide Temp.