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IS34MW04G168 Datasheet 4gb Slc-8b Ecc 1.8v X8/x16 Nand Flash Memory

Manufacturer: ISSI (now Infineon)

Overview: IS34MW04G088/168 IS35MW04G088/168 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY STANDARD NAND INTERFACE IS34/35MW04G088/168 4Gb (x8/x16) 1.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The device has 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments.

The Erase operation is implemented in a single block unit (256Kbytes + 16Kbytes).

Data in the page mode can be read out at 25ns cycle time per Word.

Key Features

  • Flexible & Efficient Memory Architecture - Memory Cell: 1bit/Memory Cell - Organization: 512Mb x8, 256Mb x16 - Page Size for x8: (4K + 256) Bytes - Page Size for x16: (2K + 128) words - Block Size for x8: 64x (4K + 256) Bytes - Block Size for x16: 64x (2K + 128) words - Number of Plane = 1 - Number of Block per Die (LUN) = 2048.
  • ONFI 1.0 compliant.
  • Highest performance - Read Performance: - Random Read: 25us (Max. ) - Serial Access: 25ns (Max. ) - Write Performance: - Pr.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS34MW04G164 4Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS34MW04G084 4Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS34MW04G088 4Gb SLC-8b ECC 1.8V X8/X16 NAND FLASH MEMORY
IS34MW01G084 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS34MW01G164 1Gb (x8/x16) 1.8V NAND FLASH MEMORY
IS34MW02G084 2Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS34MW02G164 2Gb(x8/x16) 1.8V NAND FLASH MEMORY
IS34MC01GA08 3.3V 1Gb SLC NAND Flash Memory
IS34MC01GA16 3.3V 1Gb SLC NAND Flash Memory
IS34ML01G081 1Gb (x8) 3.3V NAND FLASH MEMORY

IS34MW04G168 Distributor