IS34MW04G084
IS34MW04G084 is 4Gb(x8/x16) 1.8V NAND FLASH MEMORY manufactured by ISSI.
FEATURES
- Flexible & Efficient Memory Architecture
- Memory Cell: 1bit/Memory Cell
- Organization: 512Mb x8 /256Mb x16
- X8:
- Memory Cell Array: (512M + 16M) x 8bit
- Data Register: (2K + 64) x 8bit
- Page Size: (2K + 64) Byte
- Block Erase: (128K + 4K) Byte
- X16:
- - Memory Cell Array: (256M + 8M) x 16bit
- - Data Register: (1K + 32) x 16bit
- - Page Size: (1K + 32) Byte
- - Block Erase: (64K + 2K) Byte
- Highest performance
- Read Performance
- Random Read: 25us (Max.)
- Serial Access: 45ns (Max.)
- Write Performance
- Program time: 300us
- typical
- Block Erase time: 3ms
- typical
- Low Power with Wide Temp. Ranges
- Single 1.8V (1.7V to 1.95V) Voltage Supply
- 15 m A Active Read Current
- 10 µA Standby Current
- T emp Grades:
- Industrial: -40°C to +85°C
- Extended: -40°C to +105°C (1)
-...
