• Part: IS42RM32160C
  • Manufacturer: ISSI
  • Size: 219.48 KB
Download IS42RM32160C Datasheet PDF
IS42RM32160C datasheet preview
IS42RM32160C page 2
Page 2
IS42RM32160C page 3
Page 3

IS42RM32160C Key Features

  • Fully synchronous; all signals referenced to a
  • Internal bank for hiding row access and pre
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full
  • Programmable Burst Sequence
  • Sequential and Interleave
  • Auto Refresh (CBR)
  • TCSR (Temperature pensated Self Refresh)
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8
  • Deep Power Down Mode (DPD)

Related ISSI Datasheets

Part Number Description
IS42RM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM

IS42RM32160C Description

ISSI's IS42SM/RM32160C is a 512Mb Mobile Synchronous DRAM configured as a quad 4M x32 DRAM. It achieves high-speed data transfer using a pipeline architecture with a synchronous interface. All inputs and outputs signals are registered on the rising edge of the clock input, CLK.