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IS42RM32160C Datasheet 512Mb Mobile Synchronous DRAM

Manufacturer: ISSI (now Infineon)

Download the IS42RM32160C datasheet PDF. This datasheet also includes the IS42SM32160C variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS42SM32160C-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

: ISSI's IS42SM/RM32160C is a 512Mb Mobile Synchronous DRAM configured as a quad 4M x32 DRAM.

It achieves high-speed data transfer using a pipeline architecture with a synchronous interface.

All inputs and outputs signals are registered on the rising edge of the clock input, CLK.

Overview

IS42SM32160C IS42RM32160C 16Mx32 512Mb Mobile Synchronous DRAM NOVEMBER.

Key Features

  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access and pre- charge.
  • Programmable CAS latency: 2, 3.
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page.
  • Programmable Burst Sequence:.
  • Sequential and Interleave.
  • Auto Refresh (CBR).
  • TCSR (Temperature Compensated Self Refresh).
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full.
  • De.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS42RM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32400E 128Mb Mobile Synchronous DRAM
IS42RM32400F 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM