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IS42RM32160E

IS42RM32160E is 4M x 32Bits x 4Banks Mobile Synchronous DRAM manufactured by ISSI.
IS42RM32160E datasheet preview

IS42RM32160E Datasheet

Part number IS42RM32160E
Datasheet IS42RM32160E / IS42SM32160E Datasheet PDF (Download)
File Size 592.91 KB
Manufacturer ISSI
Description 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32160E page 2 IS42RM32160E page 3

IS42RM32160E Overview

These products are offering fully synchronous operation and are referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The data paths are internally pipelined to achieve high bandwidth.

IS42RM32160E Key Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply
  • Auto refresh and self refresh
  • All pins are patible with LVCMOS interface
  • 8K refresh cycle every 16ms (A2 grade) or 64 ms (Industrial, A1 grade)
  • Programmable Burst Length and Burst Type
  • 1, 2, 4, 8 or Full Page for Sequential Burst
  • 4 or 8 for Interleave Burst
  • Programmable CAS Latency : 2, 3 clocks
  • All inputs and outputs referenced to the positive edge of the system clock

Related Datasheets

Part Number Description Manufacturer
IS42RM32160C 512Mb Mobile Synchronous DRAM ISSI
IS42RM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM ISSI
IS42RM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM ISSI

IS42RM32160E Distributor

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