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IS42RM32160C Datasheet

Manufacturer: ISSI (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

IS42RM32160C datasheet preview

Datasheet Details

Part number IS42RM32160C
Datasheet IS42RM32160C IS42SM32160C Datasheet (PDF)
File Size 219.48 KB
Manufacturer ISSI (now Infineon)
Description 512Mb Mobile Synchronous DRAM
IS42RM32160C page 2 IS42RM32160C page 3

IS42RM32160C Overview

ISSI's IS42SM/RM32160C is a 512Mb Mobile Synchronous DRAM configured as a quad 4M x32 DRAM. It achieves high-speed data transfer using a pipeline architecture with a synchronous interface. All inputs and outputs signals are registered on the rising edge of the clock input, CLK.

IS42RM32160C Key Features

  • Fully synchronous; all signals referenced to a
  • Internal bank for hiding row access and pre
  • Programmable CAS latency: 2, 3
  • Programmable Burst Length: 1, 2, 4, 8, and Full
  • Programmable Burst Sequence
  • Sequential and Interleave
  • Auto Refresh (CBR)
  • TCSR (Temperature pensated Self Refresh)
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8
  • Deep Power Down Mode (DPD)
ISSI (now Infineon) logo - Manufacturer

More Datasheets from ISSI (now Infineon)

See all ISSI (now Infineon) datasheets

Part Number Description
IS42RM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32400E 128Mb Mobile Synchronous DRAM
IS42RM32400F 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM

IS42RM32160C Distributor

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