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IS42RM32160C - 512Mb Mobile Synchronous DRAM

Download the IS42RM32160C datasheet PDF. This datasheet also covers the IS42SM32160C variant, as both devices belong to the same 512mb mobile synchronous dram family and are provided as variant models within a single manufacturer datasheet.

General Description

ISSI's IS42SM/RM32160C is a 512Mb Mobile Synchronous DRAM configured as a quad 4M x32 DRAM.

It achieves high-speed data transfer using a pipeline architecture with a synchronous interface.

All inputs and outputs signals are registered on the rising edge of the clock input, CLK.

Key Features

  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access and pre- charge.
  • Programmable CAS latency: 2, 3.
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page.
  • Programmable Burst Sequence:.
  • Sequential and Interleave.
  • Auto Refresh (CBR).
  • TCSR (Temperature Compensated Self Refresh).
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full.
  • De.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS42SM32160C-ISSI.pdf) that lists specifications for multiple related part numbers.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS42RM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS42RM32200K 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32400E 128Mb Mobile Synchronous DRAM
IS42RM32400F 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32400G 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42RM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS42SM32160C IS42RM32160C 16Mx32 512Mb Mobile Synchronous DRAM NOVEMBER 2010 FEATURES: • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and pre- charge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full Page • Programmable Burst Sequence: • Sequential and Interleave • Auto Refresh (CBR) • TCSR (Temperature Compensated Self Refresh) • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full • Deep Power Down Mode (DPD) • Driver Strength Control (DS): 1/4, 1/2, and Full OPTIONS: • Configuration: 16Mx32 • Power Supply: IS42SMxxx - Vdd/Vddq = 3.3V IS42RMxxx - Vdd/Vddq = 2.