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IS42S16100H Datasheet 16Mb SYNCHRONOUS DYNAMIC RAM

Manufacturer: ISSI (now Infineon)

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General Description

ISSI’s 16Mb Synchronous DRAM IS42/4516100H is organized as a 524,288-word x 16-bit x 2-bank for improved performance.

The synchronous DRAMs achieve high-speed data transfer using pipeline architecture.

All inputs and outputs signals refer to the rising edge of the clock input.

Overview

IS42S16100H IS45S16100H ® Long-term Support World Class Quality 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM JULY.

Key Features

  • Clock frequency: 200, 166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Two banks can be operated simultaneously and independently.
  • Dual internal bank controlled by A11 (bank select).
  • Single 3.3V power supply.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • 2048 refresh cycles every 32ms (Com, Ind, A1 g.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Integrated Silicon Solution Logo IS42S16100 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM Integrated Silicon Solution
Integrated Silicon Solution Logo IS42S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution

More Datasheets from ISSI (now Infineon)

Part Number Description
IS42S16100A1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42S16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM
IS42S16160C 256Mb Single Data Rate Synchronous DRAM
IS42S16160G 256Mb SYNCHRONOUS DRAM
IS42S16160J 256Mb SYNCHRONOUS DRAM
IS42S16160L 256Mb SYNCHRONOUS DRAM
IS42S16320D 512Mb SDRAM
IS42S16320F 512Mb SDRAM
IS42S16400 1M-Bit x 16-Bit 4 4-Bank SDRAM