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IS42VM16800E - 128Mb Mobile Synchronous DRAM

Download the IS42VM16800E datasheet PDF. This datasheet also covers the IS42VM81600E variant, as both devices belong to the same 128mb mobile synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Description

ISSI's 128Mb Mobile Synchronous DRAM achieves highspeed data transfer using pipeline architecture.

All input and output signals refer to the rising edge of the clock input.

Both write and read accesses to the SDRAM are burst oriented.

Features

  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access and pre- charge.
  • Programmable CAS latency: 2, 3.
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page.
  • Programmable Burst Sequence:.
  • Sequential and Interleave.
  • Auto Refresh (CBR).
  • TCSR (Temperature Compensated Self Refresh).
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full.
  • Dee.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS42VM81600E-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS42VS16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS42VS16100D 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS42VS16160D 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution
IS42VS16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS42VS16400L 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42VM16800F 2M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42VM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42VM16160M 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42VM16200C 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS42VM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM

Full PDF Text Transcription

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IS42VM81600E / IS42VM16800E / IS42VM32400E IS45VM81600E / IS45VM16800E / IS45VM32400E 16Mx8, 8Mx16, 4Mx32 128Mb Mobile Synchronous DRAM FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and pre- charge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full Page • Programmable Burst Sequence: • Sequential and Interleave • Auto Refresh (CBR) • TCSR (Temperature Compensated Self Refresh) • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full • Deep Power Down Mode (DPD) • Driver Strength Control (DS): 1/4, 1/2, and Full OPTIONS • Configurations: 16M x 8, 8M x 16, 4M x 32 • Power Supply IS42VMxxx – Vdd/Vddq = 1.
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