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IS42VS16160J - 256Mb Synchronous DRAM

General Description

ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture.

All input and output signals refer to the rising edge of the clock input.

Both write and read accesses to the SDRAM are burst oriented.

Key Features

  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access and pre- charge.
  • Programmable CAS latency: 2, 3.
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page.
  • Programmable Burst Sequence:.
  • Sequential and Interleave.
  • Auto Refresh (CBR).

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📁 Similar Datasheet

Part Number Description Manufacturer
IS42VS16160D 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution
IS42VS16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS42VS16100D 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS42VS16400C1 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS42VS16400L 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS42VS16100E 16Mb SYNCHRONOUS DYNAMIC RAM
IS42VS16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM
IS42VS16400E 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS42VS32800J 256Mb Synchronous DRAM
IS42VS83200J 256Mb Synchronous DRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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IS42VS83200J / IS42VS16160J / IS42VS32800J 32Mx8, 16Mx16, 8Mx32 256Mb Synchronous DRAM FEATURES • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and pre- charge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full Page • Programmable Burst Sequence: – Sequential and Interleave • Auto Refresh (CBR) OPTIONS • Configurations: – 32M x 8 – 16M x 16 – 8M x 32 • Power Supply IS42VSxxx – Vdd/Vddq = 1.8V • Packages: x8 –TSOP II (54) x16 –TSOP II (54) x32 – TSOP II (86) • Temperature Range: Industrial (–40 ºC to 85 ºC) FEBRUARY 2015 DESCRIPTION ISSI's 256Mb Synchronous DRAM achieves high-speed data transfer using pipeline architecture.