IS43LR32100D Datasheet | ISSI

IS43/46LR32100D 512K x 32Bits x 2Banks Mobile DDR SDRAM Description The IS43/46LR32100D is 33,554,432 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 2 banks of 524,288 words x 32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock. The data paths are internally pipelined and 2n-bits prefetched to achieve high bandwidth. All input and output voltage levels are patible with LVCMOS. Features - JEDEC standard 1.8V power supply - Two internal banks for concurrent operation - MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave) - Fully differential clock inputs (CK, /CK) - All inputs except data & DM are sampled at the rising edge of the system clock - Data I/O transaction on both edges of data strobe - Bidirectional data strobe per byte of data (DQS) - DM for write masking only - Edge aligned data & data strobe output - Center aligned data & data strobe input - 64ms refresh period (4K cycle) - Auto & self refresh - Concurrent Auto Precharge - Maximum clock frequency up to 200MHz - Maximum data rate up to 400Mbps/pin - Power Saving support - PASR (Partial Array Self Refresh) - Auto TCSR (Temperature pensated Self Refresh) - Deep Power Down Mode - Programmable Driver Strength Control by Full Strength or 3/4, 1/2, 1/4, 1/8 of Full Strength - LVCMOS patible inputs/outputs Copyright © 2015 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described...