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Integrated Silicon Solution Electronic Components Datasheet

IS43LR32160B Datasheet

4M x 32Bits x 4Banks Mobile DDR SDRAM

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IS43LR32160B, IS46LR32160B
4M x 32Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR32160B is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 4,194,304 words x
32 bits. This product uses a double-data-rate architecture to achieve high-speed operation. The Data Input/ Output signals are transmitted
on a 32-bit bus. The double data rate architecture is essentially a 2N prefetch architecture with an interface designed to transfer two data
words per clock cycle at the I/O pins. This product offers fully synchronous operations referenced to both rising and falling edges of the clock.
The data paths are internally pipelined and 2n-bits prefetched to achieve very high bandwidth. All input and output voltage levels are
compatible with LVCMOS.
Features
• JEDEC standard 1.8V power supply.
• VDD = 1.8V, VDDQ = 1.8V
• Four internal banks for concurrent operation
• MRS cycle with address key programs
- CAS latency 2, 3 (clock)
- Burst length (2, 4, 8, 16)
- Burst type (sequential & interleave)
• Fully differential clock inputs (CK, /CK)
• All inputs except data & DM are sampled at the rising
edge of the system clock
• Data I/O transaction on both edges of data strobe
• Bidirectional data strobe per byte of data (DQS)
• DM for write masking only
• Edge aligned data & data strobe output
• Center aligned data & data strobe input
• 64ms refresh period (8K cycle)
• Auto & self refresh
• Concurrent Auto Precharge
• Maximum clock frequency up to 166MHZ
• Maximum data rate up to 333Mbps/pin
• Power Saving support
- PASR (Partial Array Self Refresh)
- Auto TCSR (Temperature Compensated Self Refresh)
- Deep Power Down Mode
- Programmable Driver Strength Control by Full Strength
or 1/2, 1/4, 1/8 of Full Strength
• LVCMOS compatible inputs/outputs
• Packages:
- 90-Ball BGA
-152-Ball PoP BGA
Copyright © 2011 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its
products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services
described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information
and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or
malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or
effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to
its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Rev. B | Apr. 2012
www.issi.com - dram@issi.com
1


Integrated Silicon Solution Electronic Components Datasheet

IS43LR32160B Datasheet

4M x 32Bits x 4Banks Mobile DDR SDRAM

No Preview Available !

Figure 1: 90Ball FBGA Ball Assignment
IS43LR32160B, IS46LR32160B
1 2 3 456 7 8 9
A VSS DQ31 VSSQ
B VDDQ DQ29 DQ30
C VSSQ DQ27 DQ28
D VDDQ DQ25 DQ26
E VSSQ DQS3 DQ24
F VDD DM3
NC
G CKE CLK /CLK
H A9
A11 A12
J A6 A7 A8
K A4 DM1 A5
L VSSQ DQS1 DQ8
M VDDQ DQ9 DQ10
N VSSQ DQ11 DQ12
P VDDQ DQ13 DQ14
R VSS DQ15 VSSQ
VDDQ DQ16 VDD
DQ17 DQ18 VSSQ
DQ19 DQ20 VDDQ
DQ21 DQ22 VSSQ
DQ23 DQS2 VDDQ
NC DM2 VSS
/WE /CAS /RAS
/CS BA0 BA1
A10 A0
A1
A2 DM0 A3
DQ7 DQS0 VDDQ
DQ5 DQ6 VSSQ
DQ3 DQ4 VDDQ
DQ1 DQ2 VSSQ
VDDQ DQ0 VDD
[Top View]
Rev. B | Apr. 2012
www.issi.com - dram@issi.com
2


Part Number IS43LR32160B
Description 4M x 32Bits x 4Banks Mobile DDR SDRAM
Maker ISSI
Total Page 30 Pages
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