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IS43TR16256EC Datasheet 4gb Ddr3 Sdram

Manufacturer: ISSI (now Infineon)

Overview: IS43/46TR16256EC, IS43/46TR16256ECL, IS43/46TR85120EC, IS43/46TR85120ECL 512Mx8, 256Mx16 4Gb DDR3 SDRAM with On-Chip.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
  • 8 internal banks for concurrent operation.
  • 8n-Bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst Length: 4 and 8.
  • Programmable Burst Sequence: Sequential or Interleave.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS43TR16256ECL 4Gb DDR3 SDRAM
IS43TR16256A 4Gb DDR3 SDRAM
IS43TR16256AL 4Gb DDR3 SDRAM
IS43TR16256B 4Gb DDR3 SDRAM
IS43TR16256BL 4Gb DDR3 SDRAM
IS43TR16128B 2Gb DDR3 SDRAM
IS43TR16128BL 2Gb DDR3 SDRAM
IS43TR16128C 2Gb DDR3 SDRAM
IS43TR16128CL 2Gb DDR3 SDRAM
IS43TR16512A 512M x 16 8Gb DDR3 SDRAM

IS43TR16256EC Distributor