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Integrated Silicon Solution Electronic Components Datasheet

IS43TR85120AL Datasheet

4Gb DDR3 SDRAM

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IS43/46TR16256A, IS43/46TR16256AL,
IS43/46TR85120A, IS43/46TR85120AL
512Mx8, 256Mx16 4Gb DDR3 SDRAM
FEATURES
Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V
- Backward compatible to 1.5V
High speed data transfer rates with system
frequency up to 1066 MHz
8 internal banks for concurrent operation
8n-Bit pre-fetch architecture
Programmable CAS Latency
Programmable Additive Latency: 0, CL-1,CL-2
Programmable CAS WRITE latency (CWL) based
on tCK
Programmable Burst Length: 4 and 8
Programmable Burst Sequence: Sequential or
Interleave
BL switch on the fly
Auto Self Refresh(ASR)
Self Refresh Temperature(SRT)
FEBRUARY 2018
Refresh Interval:
7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
3.9 us (8192 cycles/32 ms) Tc= 85°C to 105°C
Partial Array Self Refresh
Asynchronous RESET pin
TDQS (Termination Data Strobe) supported (x8
only)
OCD (Off-Chip Driver Impedance Adjustment)
Dynamic ODT (On-Die Termination)
Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω)
Write Leveling
Up to 200 MHz in DLL off mode
Operating temperature:
Commercial (TC = 0°C to +95°C)
Industrial (TC = -40°C to +95°C)
Automotive, A1 (TC = -40°C to +95°C)
Automotive, A2 (TC = -40°C to +105°C)
OPTIONS
Configuration:
512Mx8
256Mx16
Package:
96-ball BGA (9mm x 13mm) for x16
78-ball BGA (9mm x 10.5mm) for x8
ADDRESS TABLE
Parameter
Row Addressing
Column Addressing
Bank Addressing
Page size
Auto Precharge
Addressing
BL switch on the fly
512Mx8
A0-A15
A0-A9
BA0-2
1KB
A10/AP
A12/BC#
256Mx16
A0-A14
A0-A9
BA0-2
2KB
A10/AP
A12/BC#
SPEED BIN
Speed Option
15H
125K
107M
JEDEC Speed Grade DDR3-1333H DDR3-1600K DDR3-1866M
CL-nRCD-nRP
9-9-9
11-11-11
13-13-13
tRCD,tRP(min)
13.5
13.75
13.91
Note:Faster speed options are backward compatible to slower speed options.
093N
DDR3-2133N
14-14-14
13.09
Units
tCK
ns
Copyright © 2018 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised
to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product
can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use
in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:
a.) the risk of injury or damage has been minimized;
b.) the user assume all such risks; and
c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances
Integrated Silicon Solution, Inc. www.issi.com
Rev. I1
02/16/2018
1


Integrated Silicon Solution Electronic Components Datasheet

IS43TR85120AL Datasheet

4Gb DDR3 SDRAM

No Preview Available !

IS43/46TR16256A, IS43/46TR16256AL,
IS43/46TR85120A, IS43/46TR85120AL
1. DDR3 PACKAGE BALLOUT
1.1 DDR3 SDRAM package ballout 78-ball BGA x8
12
A
VSS
VDD
B
VSS
VSSQ
C
VDDQ
DQ2
D
VSSQ
DQ6
E VREFDQ VDDQ
F NC1 VSS
G
ODT
VDD
H NC CS#
J
VSS
BA0
K
VDD
A3
L
VSS
A5
M
VDD
A7
N VSS RESET#
Note:
NC balls have no internal connection.
3
NC
DQ0
DQS
DQS#
DQ4
RAS#
CAS#
WE#
BA2
A0
A2
A9
A13
4
5
6 7 89
NU/TDQS# VSS
VDD
DM/TDQS VSSQ VDDQ
DQ1
DQ3 VSSQ
VDD
VSS
VSSQ
DQ7
DQ5 VDDQ
CK
VSS
NC
CK#
VDD
CKE
A10/AP
ZQ
NC
A15 VREFCA VSS
A12/BC#
BA1
VDD
A1 A4 VSS
A11 A6 VDD
A14 A8 VSS
Integrated Silicon Solution, Inc. www.issi.com
Rev. I1
02/16/2018
2


Part Number IS43TR85120AL
Description 4Gb DDR3 SDRAM
Maker ISSI
Total Page 30 Pages
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