IS43TR85120EC Datasheet | ISSI

IS43/46TR16256EC, IS43/46TR16256ECL, IS43/46TR85120EC, IS43/46TR85120ECL 512Mx8, 256Mx16 4Gb DDR3 SDRAM with On-Chip ECC Features - Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V - Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward patible to 1.5V - 8 internal banks for concurrent operation - 8n-Bit pre-fetch architecture - Programmable CAS Latency - Programmable Additive Latency: 0, CL-1,CL-2 - Programmable CAS WRITE latency (CWL) based on tCK - Programmable Burst Length: 4 and 8 - Programmable Burst Sequence: Sequential or Interleave - BL switch on the fly - Auto Self Refresh(ASR) - Self Refresh Temperature(SRT) - Refresh Interval: 7.8 µs (8192 cycles/64 ms) Tc= -40°C...