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IS43TR85120ECL Datasheet 4gb Ddr3 Sdram

Manufacturer: ISSI (now Infineon)

Overview: IS43/46TR16256EC, IS43/46TR16256ECL, IS43/46TR85120EC, IS43/46TR85120ECL 512Mx8, 256Mx16 4Gb DDR3 SDRAM with On-Chip.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Key Features

  • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
  • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
  • 8 internal banks for concurrent operation.
  • 8n-Bit pre-fetch architecture.
  • Programmable CAS Latency.
  • Programmable Additive Latency: 0, CL-1,CL-2.
  • Programmable CAS WRITE latency (CWL) based on tCK.
  • Programmable Burst Length: 4 and 8.
  • Programmable Burst Sequence: Sequential or Interleave.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS43TR85120EC 4Gb DDR3 SDRAM
IS43TR85120A 4Gb DDR3 SDRAM
IS43TR85120AL 4Gb DDR3 SDRAM
IS43TR85120B 4Gb DDR3 SDRAM
IS43TR85120BL 4Gb DDR3 SDRAM
IS43TR81024B 8Gb DDR3 SDRAM
IS43TR81024BL 8Gb DDR3 SDRAM
IS43TR81280B 1Gb DDR3 SDRAM
IS43TR81280BL 1Gb DDR3 SDRAM
IS43TR81280ED 1Gb DDR3 SDRAM

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