Datasheet4U Logo Datasheet4U.com

IS45R32160D Datasheet 512Mb SDRAM

Manufacturer: ISSI (now Infineon)

Download the IS45R32160D datasheet PDF. This datasheet also includes the IS42R86400D variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS42R86400D-ISSI.pdf) that lists specifications for multiple related part numbers.

Overview

IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 MAY 2015 512Mb SDRAM device.

Key Features

  • Clock frequency: 200, 166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave ISSI's 512Mb Synchronous DRAM achieves high-speed data.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS45R32160F 512Mb SDRAM
IS45R16160D 256-MBIT SYNCHRONOUS DRAM
IS45R16320D 512Mb SDRAM
IS45R16320F 512Mb SDRAM
IS45R83200D 256-MBIT SYNCHRONOUS DRAM
IS45R86400D 512Mb SDRAM
IS45R86400F 512Mb SDRAM
IS45RM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS45RM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS45RM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM