IS45R16160D - 256-MBIT SYNCHRONOUS DRAM

Product Overview

ISSI

Datasheet Details

Part number	IS45R16160D
Manufacturer	ISSI
File Size	926.82 KB
Description	256-MBIT SYNCHRONOUS DRAM
Datasheet	IS45R16160D Datasheet
Note	This datasheet PDF includes multiple part numbers: IS45R16160D, IS42R83200D. Please refer to the document for exact specifications by model.
Additional preview pages of the IS45R16160D datasheet.

Product details

Description

A0-A12 Row Address Input A0-A9 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ7 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command WE DQM Vdd Vss Vddq Vssq NC Wri

Features

Clock frequency: 133, 100 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Single Power supply: 2.5V + 0.2V.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Auto Refresh (CBR).
Self Refresh.
8K refresh cycles every 16 ms (A2 grade) or 64 ms (com.

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Published: Aug 1, 2016 |