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IS45S83200L - 256Mb SYNCHRONOUS DRAM

Download the IS45S83200L datasheet PDF. This datasheet also covers the IS42S83200L variant, as both devices belong to the same 256mb synchronous dram family and are provided as variant models within a single manufacturer datasheet.

Features

  • Clock frequency: 200, 166, 143, 133 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Single Power supply: 3.3V + 0.3V.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave.
  • Auto Refresh (CBR).
  • Self Refresh.
  • 8K refresh cycles every 32 ms (A2 grade) or 64 ms (comm.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS42S83200L-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS45S83200C 256 Mb Single Data Rate Synchronous DRAM Integrated Silicon Solution
IS45S83200D 256-MBIT SYNCHRONOUS DRAM Integrated Silicon Solution
IS45S81600E 128Mb SYNCHRONOUS DRAM Integrated Silicon Solution
IS45S16100C1 512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution
IS45S16100E 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS45S83200G 256Mb SYNCHRONOUS DRAM
IS45S83200J 256Mb SYNCHRONOUS DRAM
IS45S81600F 128Mb SYNCHRONOUS DRAM
IS45S86400D 512Mb SDRAM
IS45S86400F 512Mb SDRAM

Full PDF Text Transcription

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IS42S83200L, IS42S16160L IS45S83200L, IS45S16160L 32Meg x 8, 16Meg x16 ADVANCED INFORMATION 256Mb SYNCHRONOUS DRAM DECEMBER 2021 FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Single Power supply: 3.3V + 0.
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