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IS45S86400D Datasheet 512Mb SDRAM

Manufacturer: ISSI (now Infineon)

Download the IS45S86400D datasheet PDF. This datasheet also includes the IS42R86400D variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS42R86400D-ISSI.pdf) that lists specifications for multiple related part numbers.

Overview

IS42/45R86400D/16320D/32160D IS42/45S86400D/16320D/32160D 16Mx32, 32Mx16, 64Mx8 MAY 2015 512Mb SDRAM device.

Key Features

  • Clock frequency: 200, 166, 143 MHz.
  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access/precharge.
  • Power supply: Vdd/Vddq = 2.3V-3.6V IS42/45SxxxxxD - Vdd/Vddq = 3.3V IS42/45RxxxxxD - Vdd/Vddq = 2.5.
  • LVTTL interface.
  • Programmable burst length.
  • (1, 2, 4, 8, full page).
  • Programmable burst sequence: Sequential/Interleave ISSI's 512Mb Synchronous DRAM achieves high-speed data.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS45S86400F 512Mb SDRAM
IS45S81600F 128Mb SYNCHRONOUS DRAM
IS45S83200G 256Mb SYNCHRONOUS DRAM
IS45S83200J 256Mb SYNCHRONOUS DRAM
IS45S83200L 256Mb SYNCHRONOUS DRAM
IS45S16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM
IS45S16100H 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16160G 256Mb SYNCHRONOUS DRAM
IS45S16160J 256Mb SYNCHRONOUS DRAM
IS45S16160L 256Mb SYNCHRONOUS DRAM