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IS45SM32400G Datasheet 1M x 32Bits x 4Banks Mobile Synchronous DRAM

Manufacturer: ISSI (now Infineon)

Download the IS45SM32400G datasheet PDF. This datasheet also includes the IS42SM32400G variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (IS42SM32400G-ISSI.pdf) that lists specifications for multiple related part numbers.

General Description

These IS42/45SM/RM/VM32400G are mobile 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits.

These products are offering fully synchronous operation and are referenced to a positive edge of the clock.

All inputs and outputs are synchronized with the rising edge of the clock input.

Overview

IS42/45SM/RM/VM32400G 1M x 32Bits x 4Banks Mobile Synchronous.

Key Features

  • JEDEC standard 3.3V, 2.5V, 1.8V power supply.
  • Auto refresh and self refresh.
  • All pins are compatible with LVCMOS interface.
  • 4K refresh cycle / 64ms.
  • Programmable Burst Length and Burst Type.
  • 1, 2, 4, 8 or Full Page for Sequential Burst.
  • 4 or 8 for Interleave Burst.
  • Programmable CAS Latency : 2,3 clocks.
  • All inputs and outputs referenced to the positive edge of the system clock.
  • Data mask function by DQM.

More Datasheets from ISSI (now Infineon)

Part Number Description
IS45SM32400H 1M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45SM32100D 512K x 32Bits x 2Banks Low Power Synchronous DRAM
IS45SM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45SM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM
IS45SM32800E 2M x 32Bits x 4Banks Mobile Synchronous DRAM
IS45SM16160E 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS45SM16200D 1M x 16Bits x 2Banks Low Power Synchronous DRAM
IS45S16100F 512K Words x 16 Bits x 2 Banks 16Mb SDRAM
IS45S16100H 16Mb SYNCHRONOUS DYNAMIC RAM
IS45S16160G 256Mb SYNCHRONOUS DRAM