IS46LR32800H - 2M x 32Bits x 4Banks Mobile DDR SDRAM

Product Overview

ISSI

Part number	IS46LR32800H
Manufacturer	ISSI
File Size	1.80 MB
Description	2M x 32Bits x 4Banks Mobile DDR SDRAM
Datasheet	IS46LR32800H Datasheet
Additional preview pages of the IS46LR32800H datasheet.

The IS43/46LR32800H is 268,435,456 bits CMOS Mobile Double Data Rate Synchronous DRAM organized as 4 banks of 2,097,152 words x 32 bits.

JEDEC standard 1.8V power supply.
VDD = 1.8V, VDDQ = 1.8V.
Four internal banks for concurrent operation.
MRS cycle with address key programs - CAS latency 2, 3 (clock) - Burst length (2, 4, 8, 16) - Burst type (sequential & interleave).
Fully differential clock inputs (CK, /CK).
All inputs except data & DM are sampled at the rising edge of the system clock.
Data I/O transaction on both edges of data strobe.
Bidirectional d.

📁 Similar Datasheet

IS46R16160F - 256Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16320D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16320E - 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R16800E - 128Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32160D - 16Mx32 32Mx16 64Mx8 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32160E - 512Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32400E - 128Mb DDR SDRAM (Integrated Silicon Solution)
IS46R32800F - 256Mb DDR SDRAM (Integrated Silicon Solution)

Other Datasheets by ISSI

Published: Feb 18, 2024 |