IS46TR85120ECL Datasheet 4gb Ddr3 Sdram

Manufacturer: ISSI (now Infineon)

Overview: IS43/46TR16256EC, IS43/46TR16256ECL, IS43/46TR85120EC, IS43/46TR85120ECL 512Mx8, 256Mx16 4Gb DDR3 SDRAM with On-Chip.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IS46TR85120ECL
Manufacturer	ISSI (now Infineon)
File Size	4.57 MB
Description	4Gb DDR3 SDRAM
Datasheet	IS46TR85120ECL IS46TR16256EC Datasheet (PDF)

Key Features

Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V.
Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V.
8 internal banks for concurrent operation.
8n-Bit pre-fetch architecture.
Programmable CAS Latency.
Programmable Additive Latency: 0, CL-1,CL-2.
Programmable CAS WRITE latency (CWL) based on tCK.
Programmable Burst Length: 4 and 8.
Programmable Burst Sequence: Sequential or Interleave.

IS46TR85120ECL Distributor & Price

Compare IS46TR85120ECL distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from ISSI (now Infineon)

Part Number	Description
IS46TR85120EC	4Gb DDR3 SDRAM
IS46TR85120A	4Gb DDR3 SDRAM
IS46TR85120AL	4Gb DDR3 SDRAM
IS46TR85120B	4Gb DDR3 SDRAM
IS46TR85120BL	4Gb DDR3 SDRAM
IS46TR81024B	8Gb DDR3 SDRAM
IS46TR81024BL	8Gb DDR3 SDRAM
IS46TR81280B	1Gb DDR3 SDRAM
IS46TR81280BL	1Gb DDR3 SDRAM
IS46TR81280ED	1Gb DDR3 SDRAM