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IS49NLC36800A - Common I/O RLDRAM 2 Memory

Download the IS49NLC36800A datasheet PDF. This datasheet also covers the IS49NLC93200A variant, as both devices belong to the same common i/o rldram 2 memory family and are provided as variant models within a single manufacturer datasheet.

General Description

1.1 288Mb (32Mx9) Common I/O BGA Ball-out (Top View) 1 2 3 4 56 7 8 9 10 11 12 A VREF VSS VEXT VSS VSS VEXT TMS TCK B VDD DNU3 DNU3 VSSQ VSSQ DQ0 DNU3 VDD C VTT DNU3 DNU3 VDDQ VDDQ DQ1 DNU3 VTT D A221 DNU3 DNU3 VSSQ VSSQ QK0# QK0 VSS E A212 DNU3 DNU3 VDD

Key Features

  • 533MHz DDR operation (1.067 Gb/s/pin data rate).
  • 38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency).
  • Reduced cycle time (15ns at 533MHz).
  • 32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms).
  • 8 internal banks.
  • Non-multiplexed addresses (address multiplexing option available).
  • SRAM-type interface.
  • Programmable READ latency (RL), row cycle time, and burst sequence length.
  • Balanced READ and WRITE latencie.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS49NLC93200A-ISSI.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IS49NLC36800 288Mb Common I/O RLDRAM 2 Memory Integrated Silicon Solution
IS49NLC36160 Common I/O RLDRAM 2 Memory Integrated Silicon Solution
IS49NLC36160A Common I/O RLDRAM 2 Memory Integrated Silicon Solution
IS49NLC18160 288Mb Common I/O RLDRAM 2 Memory Integrated Silicon Solution
IS49NLC18320 Common I/O RLDRAM 2 Memory Integrated Silicon Solution

Other Datasheets by ISSI (now Infineon)

Part Number Description
IS49NLC18160A Common I/O RLDRAM 2 Memory
IS49NLC93200A Common I/O RLDRAM 2 Memory
IS49RL18128 4 Meg x 18 x 16 Banks x 2 Ranks RLDRAM3
IS49RL36640 2Meg x 36 x 16 Banks RLDRAM3
IS41C16128 128K x 16 (2-MBIT) DYNAMIC RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
IS49NLC93200A/IS49NLC18160A/IS49NLC36800A 32Mbx9, 16Mbx18, 8Mbx36 Common I/O RLDRAM 2 Memory AUGUST 2021 FEATURES  533MHz DDR operation (1.067 Gb/s/pin data rate)  38.4Gb/s peak bandwidth (x36 at 533 MHz clock frequency)  Reduced cycle time (15ns at 533MHz)  32ms refresh (8K refresh for each bank; 64K refresh command must be issued in total, each 32ms)  8 internal banks  Non-multiplexed addresses (address multiplexing option available)  SRAM-type interface  Programmable READ latency (RL), row cycle time, and burst sequence length  Balanced READ and WRITE latencies in order to optimize data bus utilization  Data mask signals (DM) to mask signal of WRITE data; DM is sampled on both edges of DK.