• Part: IS61NLP51218B
  • Description: 9Mb STATE BUS SRAM
  • Manufacturer: ISSI
  • Size: 940.52 KB
Download IS61NLP51218B Datasheet PDF
ISSI
IS61NLP51218B
FEATURES - 100 percent bus utilization - No wait cycles between Read and Write - Internal self-timed write cycle - Individual Byte Write Control - Single R/W (Read/Write) control pin - Clock controlled, registered address, data and control - Interleaved or linear burst sequence control us- ing MODE input - Three chip enables for simple depth expansion and address pipelining - Power Down mode - mon data inputs and data outputs - CKE pin to enable clock and suspend operation - JEDEC 100-pin QFP, 165-ball BGA and 119-ball BGA packages - Power supply: NLP: Vdd 3.3V (± 5%), Vddq 3.3V/2.5V (± 5%) NVP: Vdd 2.5V (± 5%), Vddq 2.5V (± 5%) NVVP: Vdd 1.8V (± 5%), Vddq 1.8V (± 5%) - JTAG Boundary Scan for BGA packages - Industrial temperature available - Lead-free available DESCRIPTION The 9 Meg product family features high-speed, low-power synchronous static RAMs designed to provide a burstable, high-performance, 'no wait' state, device for networking and munications applications. They are...