IS61VF12832EC
FEATURES
DESCRIPTION
APRIL 2017
- Internal self-timed write cycle
- Individual Byte Write Control and Global Write
- Clock controlled, registered address, data and control
- Burst sequence control using MODE input
- Three chip enable option for simple depth expansion and address pipelining
- mon data inputs and data outputs
- Auto Power-down during deselect
The 4Mb product family features high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance memory for munication and networking applications. The IS61(64)LF/VF12836EC are organized as 131,072 words by 36bits. The IS61(64)LF/VF12832EC are organized as 131,072 words by 32bits. The IS61(64)LF/VF25618EC are organized as 262,144 words by 18 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and high-drive capability outputs into a single monolithic circuit. All synchronous inputs pass through registers controlled by a...
