IS61WV25616ALL Datasheet (256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM)

Part: IS61WV25616ALL
Manufacturer: ISSI
Size: 333.17 KB

IS61WV25616ALL Key Features

High-speed access time: 8, 10, 20 ns
Low Active Power: 85 mW (typical)
Low Standby Power: 7 mW (typical)
High-speed access time: 25, 35, 45 ns
Low Active Power: 35 mW (typical)
Low Standby Power: 0.6 mW (typical)
Single power supply
Vdd 1.65V to 2.2V (IS61WV25616Axx)
Vdd 2.4V to 3.6V (IS61/64WV25616Bxx)
Fully static operation: no clock or refresh required

Related ISSI Datasheets

Part Number	Description
IS61WV25616ALS	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616BLL	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616BLS	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616EDALL	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616EDBLL	256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV25616ALL Description

It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using Chip Enable and Output Enable...