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IS61WV25616BLS Datasheet 256k X 16 High Speed Asynchronous CMOS Static Ram

Manufacturer: ISSI (now Infineon)

Overview: IS61WV25616ALL/ALS IS61WV25616BLL/BLS IS64WV25616BLL/BLS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM JULY.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

The ISSI IS61WV25616Axx/Bxx and IS64WV25616Bxx are high-speed, 4,194,304-bit static RAMs organized as 262,144 words by 16 bits.

It is fabricated using ISSI's high- performance CMOS technology.This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels.

Key Features

  • HIGH SPEED: (IS61/64WV25616ALL/BLL).
  • High-speed access time: 8, 10, 20 ns.
  • Low Active Power: 85 mW (typical).
  • Low Standby Power: 7 mW (typical) CMOS standby LOW POWER: (IS61/64WV25616ALS/BLS).
  • High-speed access time: 25, 35, 45 ns.
  • Low Active Power: 35 mW (typical).
  • Low Standby Power: 0.6 mW (typical) CMOS standby.
  • Single power supply.
  • Vdd 1.65V to 2.2V (IS61WV25616Axx).
  • Vdd 2.4V to 3.6V (IS61/64WV25616Bxx).

More Datasheets from ISSI (now Infineon)

Part Number Description
IS61WV25616BLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616ALL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616ALS 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616EDALL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616EDBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25616LEBLL 256K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632ALL 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632ALS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632BLL 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM
IS61WV25632BLS 256K x 32 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM

IS61WV25616BLS Distributor